Scanning Quantum Dot Microscopy.
Scanning Quantum Dot Microscopy.
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DOI：
10.1103/physrevlett.115.026101
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发表时间：
2015-03
影响因子：
8.6
通讯作者：
C. Wagner;Matthew F. B. Green;Philipp Leinen;Thorsten Deilmann;P. Krüger;M. Rohlfing;R. Temirov;F. Tautz
中科院分区：
文献类型：
--
作者：
C. Wagner;Matthew F. B. Green;Philipp Leinen;Thorsten Deilmann;P. Krüger;M. Rohlfing;R. Temirov;F. Tautz
我们介绍了一种扫描探针技术，使三维成像的局部静电势场与亚纳米分辨率。登记单电子充电事件的分子量子点连接到原子力显微镜的尖端在5 K下运行，配备了qPlus音叉，我们的图像的四极场的一个单一的分子。为了演示定量测量，我们研究了吸附在金属表面上的单个金属吸附原子的偶极场。我们表明，由于其高灵敏度的技术可以探测静电电位在很大的距离从他们的来源，这应该允许增加表面粗糙度的样品的成像。
We introduce a scanning probe technique that enables three-dimensional imaging of local electrostatic potential fields with subnanometer resolution. Registering single electron charging events of a molecular quantum dot attached to the tip of an atomic force microscope operated at 5 K, equipped with a qPlus tuning fork, we image the quadrupole field of a single molecule. To demonstrate quantitative measurements, we investigate the dipole field of a single metal adatom adsorbed on a metal surface. We show that because of its high sensitivity the technique can probe electrostatic potentials at large distances from their sources, which should allow for the imaging of samples with increased surface roughness.