Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%
Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%
复制标题
垂直%20集成%20光学%20传感器%20与%20光电导%20增益%20>%2010%20和%20填充%20系数%20>%2070%
DOI:
10.1109/led.2018.2792003
复制
发表时间:
2018
影响因子:
4.9
通讯作者:
Ningsheng Xu
中科院分区:
文献类型:
--
作者:
Xi;a Zhou;Meng Zhang;Yitong Xu;Wei Zhou;Kai Wang;Arokia Nathan;Man Wong;Hoi Sing Kwok;Hai Ou;Jun Chen;Shaozhi Deng;Ningsheng Xu
A hybrid active pixel optical sensor for high-resolution and high-sensitivity imaging is proposed and experimentally demonstrated. The sensor vertically integrates an amorphous silicon p-i-n photodiode and a low-temperature polycrystalline silicon readout thin-film transistor (TFT). The vertical integration results in a high fill factor (>70%) and an enlarged photosensing area in the pixel. In the photodiode-gated TFT structure of the sensor, the output current is amplified by operating the TFT in the sub-threshold regime. A weak wavelength-dependent photoconductive gain >10 is obtained at visible wavelengths, enabling large area low-level light detection.