Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%

Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%
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垂直%20集成%20光学%20传感器%20与%20光电导%20增益%20>%2010%20和%20填充%20系数%20>%2070%

DOI:
10.1109/led.2018.2792003
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发表时间:
2018
影响因子:
4.9
通讯作者:
Ningsheng Xu
Ningsheng Xu
中科院分区:
工程技术2区
文献类型:
--
作者:
Xi;a Zhou;Meng Zhang;Yitong Xu;Wei Zhou;Kai Wang;Arokia Nathan;Man Wong;Hoi Sing Kwok;Hai Ou;Jun Chen;Shaozhi Deng;Ningsheng Xu

文献摘要

相似文献

提出了一种用于高分辨率和高灵敏度成像的混合有源像素光学传感器,并进行了实验验证。该传感器垂直集成了非晶硅p-i-n光电二极管和低温多晶硅读出薄膜晶体管(TFT)。垂直积分导致像素中的高填充因子(>70%)和扩大的感光区域。在传感器的光电二极管门控TFT结构中,通过在亚阈值状态下操作TFT来放大输出电流。在可见光波长处获得了>10的弱波长依赖的光电导增益,使得能够进行大面积低水平光检测。
A hybrid active pixel optical sensor for high-resolution and high-sensitivity imaging is proposed and experimentally demonstrated. The sensor vertically integrates an amorphous silicon p-i-n photodiode and a low-temperature polycrystalline silicon readout thin-film transistor (TFT). The vertical integration results in a high fill factor (>70%) and an enlarged photosensing area in the pixel. In the photodiode-gated TFT structure of the sensor, the output current is amplified by operating the TFT in the sub-threshold regime. A weak wavelength-dependent photoconductive gain >10 is obtained at visible wavelengths, enabling large area low-level light detection.