Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O3/La2CuO4:Sr Heterostructure
Memory Retention and Switching Speed of Ferroelectric Field Effect in (Pb, La)(Ti, Zr)O3/La2CuO4:Sr Heterostructure
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(Pb, La)(Ti, Zr)O3/La2CuO4:Sr 异质结构中铁电场效应的记忆保持和切换速度
DOI：
10.1143/jjap.35.1564
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发表时间：
1996
影响因子：
1.5
通讯作者：
Yasuaki Matsumoto Yasuaki Matsumoto
中科院分区：
文献类型：
--
作者：
Yukio Watanabe;Mitsuru Tanamura Mitsuru Tanamura;Yasuaki Matsumoto Yasuaki Matsumoto
本文报道了作者先前提出的（Pb, La）（Ti, Zr）O3/La2CuO4场效应器件的长周期记忆保持特性和开关速度。大多数器件保留了铁电场效应引起的初始电导调制的一半，维持了大约两周。一些记忆保留超过10个月，这明显超过了先前报道的铁电场效应器件的记忆保留性能。当源极和漏极之间的电导增加时，具有200µm长和40µm宽栅极面积的器件的开关时间缩短到10µs。如此短的开关时间有利于基于场效应解释电导调制。讨论了实现高密度集成的方法。
We report long period memory retention characteristics and switching speed of (Pb, La)(Ti, Zr)O3/La2CuO4 field effect devices previously proposed by one of the authors. Most of the devices retained one-half of their initial conductance modulations induced by the ferroelectric field effect for about two weeks. Some retained memory for over 10 months, which markedly surpasses previously reported performances for the memory retention of ferroelectric field effect devices. The switching time of devices having effectively a 200-µm-long and 40-µm-wide gate area reduced to 10 µs, as the conductance between the source and drain increased. Such a short switching time is favorable for interpretation of the conductance modulation based on the field effect. Approaches to high density integration are discussed.