NH3 Plasma Interface Modification for Silicon Surface Passivation at Very Low Temperature
NH3 Plasma Interface Modification for Silicon Surface Passivation at Very Low Temperature
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极低温下硅表面钝化的 NH3 等离子体界面改性
DOI：
10.1143/jjap.47.5320
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发表时间：
2008
期刊：
影响因子：
--
通讯作者：
T. Fuyuki
中科院分区：
文献类型：
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作者：
Yu Takahashi;Jin Nigo;A. Ogane;Y. Uraoka;T. Fuyuki
钝化层（SiOX、SiNX等）的影响使用等离子体增强化学气相沉积（PECVD）的晶体硅太阳能电池显示出随着沉积温度的降低（<300 °C）的高表面复合。采用NH3等离子体对Czochralski（Cz）单晶硅（c-Si）表面进行等离子体处理，然后分别在系统中低温沉积氮化硅（SiNX）层和非晶硅（a-Si：H）层。采用微波光电导衰减（μ-PCD）、准稳态光电导（QSSPC）、傅里叶变换红外光谱（FT-IR）、二次离子探针质谱（西姆斯）和X射线光电子能谱（XPS）等方法研究了NH3等离子体处理对界面的影响。用NH3等离子体处理的有效寿命（τeff）超过没有处理的τeff。即使在非常低的沉积温度（100 °C）的情况下，τeff也显著提高（约38倍）。该NH3等离子体处理效果是由来自西姆斯测量的氢化和碳清洁引起的。发现在100 °C下可以沉积出具有优异表面钝化性能的SiNX薄膜。
The effect of passivation layers (SiOX, SiNX, etc.) using plasma-enhanced chemical vapor deposition (PECVD) for crystalline silicon solar cells showed high surface recombination with decreasing of deposition temperature (<300 °C). The surface of Czochralski (Cz) monocrystalline silicon (c-Si) wafer was exposed to an NH3 plasma before the low-temperature deposition of silicon nitride (SiNX) layer or amorphous silicon (a-Si:H) layer in a system respectively. The effect of NH3 plasma treatment for the interface was observed by microwave photoconductance decay (µ-PCD), quasi-steady-state photoconductance (QSSPC), Fourier transform infrared spectroscopy (FT-IR), secondary ion-microprobe mass spectrometry (SIMS), and X-ray photoemission spectroscopy (XPS). The effective lifetime (τeff) with NH3 plasma treatment exceeded τeff without the treatment. Even in the case of very low deposition temperature (100 °C), τeff is improved dramatically (about 38 times). This NH3 plasma treatment effect was caused by hydrogenation and carbon cleaning from the SIMS measurement. It was found that SiNX films with excellent surface passivation properties can be deposited at 100 °C.