Miniature, highly sensitive MOSCAP ring modulators in co-optimized electronic-photonic CMOS
Miniature, highly sensitive MOSCAP ring modulators in co-optimized electronic-photonic CMOS
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DOI：
10.1364/prj.438047
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发表时间：
2022-01-01
影响因子：
7.6
通讯作者：
Popovi, Milos A.
中科院分区：
文献类型：
--
作者：
Gevorgyan, Hayk;Khilo, Anatol;Popovi, Milos A.
高性能硅光子学和电子学的融合，单片集成在最先进的 CMOS 平台中，是实现电子光子片上系统终极效率、性能和扩展的圣杯。它需要出现将最先进的射频晶体管与优化的硅光子学相结合的平台，以及具有超低能量、增加的工作频谱和消除高耗电热调谐的一代光子器件技术。在本文中，在协同优化的单片电子光子平台（GlobalFoundries 45CLO）中，我们将金属氧化物半导体（MOS）场效应晶体管的基本结构转变为一种新型高效MOS电容器环形调制器。它具有最小的环形腔（半径为 1.5 μm）、最大的相应无杂散自由光谱范围（FSR = 8.5 THz），并在迄今为止所展示的硅调制器中记录了 O 频段的 30 GHz/V 移频效率。通过 1V (pp) RF 驱动，我们展示了开放的光眼，同时对调制器进行电光调谐，以跟踪激光波长超过 400 pm (69 GHz) 的变化（使用 2.5V(DC) 范围）。在低于 40 nW 的功率下实现了 90 GHz 最大电光谐振位移，从而在 CMOS 光子平台中提供了强大的非热调谐机制。该调制器具有单独优化的主体层，但与 45 nm 晶体管共享栅极器件层和栅极氧化物，同时满足所有 CMOS 可制造性设计规则。这种电子学和光子学的融合演进可能是高性能片上系统平台的未来。 (C)2021中国激光出版社
Convergence of high-performance silicon photonics and electronics, monolithically integrated in state-of-the-art CMOS platforms, is the holy grail for enabling the ultimate efficiencies, performance, and scaling of electronic-photonic systems-on-chip. It requires the emergence of platforms that combine state-of-the-art RF transistors with optimized silicon photonics, and a generation of photonic device technology with ultralow energies, increased operating spectrum, and the elimination of power-hungry thermal tuning. In this paper, in a co-optimized monolithic electronics-photonics platform (GlobalFoundries 45CLO), we turn the metal-oxide-semiconductor (MOS) field-effect transistor's basic structure into a novel, highly efficient MOS capacitor ring modulator. It has the smallest ring cavity (1.5 mu m radius), largest corresponding spur-free free spectral range (FSR = 8.5 THz), and record 30 GHz/V shift efficiency in the O-band among silicon modulators demonstrated to date. With 1V (pp) RF drive, we show an open optical eye while electro-optically tuning the modulator to track over 400 pm (69 GHz) change in the laser wavelength (using 2.5V(DC) range). A 90 GHz maximum electro-optic resonance shift is demonstrated with under 40 nW of power, providing a strong nonthermal tuning mechanism in a CMOS photonics platform. The modulator has a separately optimized body layer but shares the gate device layer and the gate oxide with 45 nm transistors, while meeting all CMOS manufacturability design rules. This type of convergent evolution of electronics and photonics may be the future of platforms for high-performance systems-on-chip. (C) 2021 Chinese Laser Press