Atmospheric pressure chemical vapour deposition of boron doped titanium dioxide for photocatalytic water reduction and oxidation.
Atmospheric pressure chemical vapour deposition of boron doped titanium dioxide for photocatalytic water reduction and oxidation.
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DOI：
10.1039/c3cp52665h
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发表时间：
2013-09
期刊：
影响因子：
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通讯作者：
P. Carmichael;David Hazafy;D. Bhachu;A. Mills;J. Darr;I. Parkin
中科院分区：
文献类型：
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作者：
P. Carmichael;David Hazafy;D. Bhachu;A. Mills;J. Darr;I. Parkin
以氯化钛、乙酸乙酯和硼酸三异丙酯为原料，分别在500、550和600 °C下在钢和掺氟氧化锡衬底上用常压化学气相沉积法制备了掺硼二氧化钛（B-TiO 2）薄膜。使用粉末X射线衍射（PXRD）对薄膜进行表征，其在较低沉积温度（500和550 °C）下显示出锐钛矿相TiO 2，在较高沉积温度（600 °C）下显示出金红石。X射线光电子能谱（XPS）显示在O-取代位置的掺杂剂水平为0.9原子% B。在牺牲系统中使用辐照度为2 mW cm（-2）的365 nm UV光测试膜减少水的能力。B-TiO 2在24 μL cm（-2）h（-1）的产氢速率远远超过未掺杂TiO 2在2.6 μL cm（-2）h（-1）的产氢速率。B-TiO 2样品也被证明是积极的水氧化在牺牲溶液。光电流密度测试还显示，B掺杂的样品表现更好，具有较早的光电流开始。
Boron-doped titanium dioxide (B-TiO2) films were deposited by atmospheric pressure chemical vapour deposition of titanium(iv) chloride, ethyl acetate and tri-isopropyl borate on steel and fluorine-doped-tin oxide substrates at 500, 550 and 600 °C, respectively. The films were characterised using powder X-ray diffraction (PXRD), which showed anatase phase TiO2 at lower deposition temperatures (500 and 550 °C) and rutile at higher deposition temperatures (600 °C). X-ray photoelectron spectroscopy (XPS) showed a dopant level of 0.9 at% B in an O-substitutional position. The ability of the films to reduce water was tested in a sacrificial system using 365 nm UV light with an irradiance of 2 mW cm(-2). Hydrogen production rates of B-TiO2 at 24 μL cm(-2) h(-1) far exceeded undoped TiO2 at 2.6 μL cm(-2) h(-1). The B-TiO2 samples were also shown to be active for water oxidation in a sacrificial solution. Photocurrent density tests also revealed that B-doped samples performed better, with an earlier onset of photocurrent.