Measurement of the backscatter coefficient using resist response curves for 20–100 keV electron beam lithography on Si
Measurement of the backscatter coefficient using resist response curves for 20–100 keV electron beam lithography on Si
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使用硅上 20–100 keV 电子束光刻的抗蚀剂响应曲线测量反向散射系数
DOI：
10.1116/1.588590
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发表时间：
1996
影响因子：
1.4
通讯作者：
C. Biddick
中科院分区：
文献类型：
--
作者：
G. Watson;Diana C. Fu;S. Berger;D. Tennant;L. Fetter;A. Novembre;C. Biddick
有效反向散射系数η是必须精确已知的量，使得邻近效应可以被充分补偿以使电子束光刻中的特征尺寸变化最小化。采用了一种独特的技术来测量η，该技术不需要反向散射剂量分布的精确形式。该方法简单地比较印刷特征中心附近的抗蚀剂响应，所述印刷特征比长程散射的特征范围小得多和大得多。该技术已用于估计100 keV束流能量下Si上的反向散射系数。我们已经将这种测量方法推广到在较低束流能量下测定η。结果表明，在100、50、40和20 keV束流能量下，Si上的η分别为0.38、0.50、0.55和0.46。Monte Carlo模拟表明，随着束流能量的增加，η减小的趋势，与实验结果一致，除了在20 keV。
The effective backscatter coefficient η is a quantity that must be known with precision so that the proximity effect can be adequately compensated to minimize feature size variations in electron beam lithography. A unique technique to measure η that does not require the precise form of the backscatter dose distribution was employed. This method simply compares the resist response near the center of printed features that are much smaller and much larger than the characteristic range of the long range scatter. This technique was already employed to estimate the backscatter coefficient on Si at 100 keV beam energies. We have extended this measurement to determine η at lower beam energies. Results show that η on Si is 0.38, 0.50, 0.55, and 0.46 for 100, 50, 40, and 20 keV beam energies, respectively. Monte Carlo simulations indicate a trend of decreasing η with increasing beam energy, consistent with the experimental results except at 20 keV.