Reflected waves and their associated current [in IGBT VSIs]
Reflected waves and their associated current [in IGBT VSIs]
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反射波及其相关电流 [在 IGBT VSI 中]
DOI：
10.1109/28.806053
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发表时间：
1999
影响因子：
4.4
通讯作者：
G. Skibinski
中科院分区：
文献类型：
--
作者：
D. Leggate;J. Pankau;D. Schlegel;R. Kerkman;G. Skibinski
快速绝缘栅双极型晶体管（IGBT）电压源逆变器产生的反射波瞬态电压已经得到了大量的研究。这些瞬态的建模和仿真需要复杂的电机和电缆模型。大多数电压源脉宽调制（PWM）可调速驱动器供应商现在提供无源和有源控制技术的组合，以减轻过压应力的不利影响，然而，无源修复的成本往往超过驱动器的成本。低上升时间器件的另一个方面是行波产生的电流，迄今为止还没有研究到过电压问题的程度。在本文中，过电压问题的历史观点。系统组件的模型进行了审查，仿真结果与实验结果进行了比较。然后，这些模型被用来预测的峰值电流从电压源逆变器的电缆，负载和IGBT的上升时间被改变。然后，本文将研究反射波电流对电流检测、驱动控制和器件性能的影响。根据这些结果，确定了最小上升时间。
Reflected-wave transient voltages that result from fast insulated gate bipolar transistor (IGBT) voltage-source inverters have received considerable investigation. The modeling and simulation of these transients require sophisticated motor and cable models. Most voltage-source pulsewidth modulated (PWM) adjustable-speed drive suppliers now provide combinations of passive and active control techniques to mitigate the adverse effects of overvoltage stress, however, the costs of the passive fixes often exceed the cost of the drive. Another aspect of low-rise-time devices, heretofore not examined to the extent of the overvoltage problem, is the resulting current from traveling waves. In this paper, a historical perspective of the overvoltage problem is presented. Models of system components are reviewed, and simulation results are compared with experimental results. These models are then employed to predict the peak currents from voltage-source inverters as the cable, load, and IGBT rise time are altered. The paper will then examine the consequences of reflected wave currents on current sensing, drive control and device performance. From these results, a minimum rise time is established.