The Spatial Resolution Limit for an Individual Domain Wall in Magnetic Nanowires
The Spatial Resolution Limit for an Individual Domain Wall in Magnetic Nanowires
复制标题
磁性纳米线中单个畴壁的空间分辨率极限
DOI：
10.1021/acs.nanolett.7b03199
复制
发表时间：
2017
期刊：
影响因子：
10.8
通讯作者：
Baldo, Marc A.
中科院分区：
文献类型：
--
作者：
Dutta, Sumit;Siddiqui, Saima A.;Currivan-Incorvia, Jean Anne;Ross, Caroline A.;Baldo, Marc A.
磁性纳米线是多种有前途的非易失性计算设备的基础，其中最著名的是磁性跑道存储器和畴壁逻辑。在这里，我们通过分析包含单畴壁的磁性纳米线来确定这些技术中的模拟信息容量。尽管可以故意用凹口对导线进行图案化以定义畴壁的离散位置，但导线的线边缘粗糙度也可以在低于制造工艺分辨率的尺寸处捕获畴壁，从而确定畴壁放置的基本分辨率限制。使用边缘粗糙度的分形模型，我们在理论上和实验上表明，导线的模拟信息容量受到导线边缘粗糙度的自仿射统计的限制，这是对于缩放到边缘粗糙度主导壁移动的能量景观的域壁器件的相关结果。
Magnetic nanowires are the foundation of several promising nonvolatile computing devices, most notably magnetic racetrack memory and domain wall logic. Here, we determine the analog information capacity in these technologies, analyzing a magnetic nanowire containing a single domain wall. Although wires can be deliberately patterned with notches to define discrete positions for domain walls, the line edge roughness of the wire can also trap domain walls at dimensions below the resolution of the fabrication process, determining the fundamental resolution limit for the placement of a domain wall. Using a fractal model for the edge roughness, we show theoretically and experimentally that the analog information capacity for wires is limited by the self-affine statistics of the wire edge roughness, a relevant result for domain wall devices scaled to regimes where edge roughness dominates the energy landscape in which the walls move.