An Approach to Use a Raw Single Crystal Whisker as Intrinsic Josephson Junctions Stack
An Approach to Use a Raw Single Crystal Whisker as Intrinsic Josephson Junctions Stack
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DOI：
10.1007/s10948-012-2078-z
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发表时间：
2013-08
影响因子：
1.8
通讯作者：
Shrikant Saini;Shrikant Saini;H. Wang;T. Hatano;Sang-Jae Kim
中科院分区：
文献类型：
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作者：
Shrikant Saini;Shrikant Saini;H. Wang;T. Hatano;Sang-Jae Kim
我们开发了一种观察Bi2Sr2CaCu2O8+δ(Bi-2212)单晶晶须的本征约瑟夫森效应的技术。在这项技术中，一个原始的Bi-2212单晶晶须被用作沿轴的本征约瑟夫森结（ijs）。该技术简单、快速、成本低。首先，在平面上制造一个晶须，然后在两侧的平面上制造两个电极。具有这种配置的站立晶须作为ijs工作。静晶须（1.6 mm×40 μm×3 μm）的转变温度约为84 K。在8 K时，临界电流约为15 mA（临界电流密度~ 23 A/cm2）。我们观察到电流-电压（I-V）特性的电压间隙约为500 mV。这相当于在晶须厚度的约2000个ij中有几百个ij。观察结果表明，该技术可随着单晶质量、单晶须形状和退火条件的改善而进一步改进。
We have developed a technique to observe the intrinsic Josephson effect in Bi2Sr2CaCu2O8+δ(Bi-2212) single crystal whiskers. In this technique, a raw Bi-2212 single crystal whisker used as intrinsic Josephson junctions (IJJs) along thec-axis. The technique is simple, quick, and less-cost processing. First, a whisker made to stand onac-plane and then two electrodes were made inab-planes on either side. The standing whisker with this configuration worked as IJJs. The standing whisker (1.6 mm×40 μm×3 μm) showed the transition temperature of about 84 K. The critical current was about 15 mA at 8 K (critical current density ∼23 A/cm2). We observed voltage gap of about 500 mV in current–voltage (I–V) characteristics. This corresponds to a few hundred of IJJs out of ∼2,000 IJJs in the whisker thickness. Observations reflect that the technique can be further improved with the single crystal quality, shape of single crystal whisker, and annealing conditions.