A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs
A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs
复制标题
双极互补调制变换器臂的 GaN 和 Si 功率器件开关性能比较研究
DOI：
10.3390/en12061146
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发表时间：
2019
期刊：
影响因子：
3.2
通讯作者：
Xuezhen Ding
中科院分区：
文献类型：
--
作者：
Baochao Wang;Shili Dong;Shanlin Jiang;Chun He;Jian;Hui Ye;Xuezhen Ding
商用成熟的氮化镓高电子迁移率晶体管(GaN HEMT)技术因其在工业电力电子领域的巨大应用潜力而备受关注。GaN HEMT以低导通电阻、高耐压和高开关频率而闻名。本文对额定功率相近的GaN HEMT和常规硅绝缘栅双极晶体管(SiIGBT)进行了对比实验评价。从元件级和转换器级两个方面进行了比较研究。首先，在离散元件水平上比较了GaN HEMT和Si-IGBT的稳态和动态特性，包括正向导通特性、反向导通特性和开关时间。然后，根据测量数据分析了元件的开关损耗。最后，在互补降压变换器级上，比较了总体效率和与EMI相关的共模电流。在测试条件下，GaN HEMT的开关损耗远小于相同功率等级的IGBT。然而，值得注意的是，应特别注意在互补调制变换器桥臂的PWM死区(或死区)内的反向导通损耗。当从IGBT向GaN迁移时，采用传统的IGBT方式选择死区时间和负栅极驱动电压会使GaN反向导通损耗较高。为了充分利用GaN的优势，建议使用0V的关断栅压，最小化GaN的死区时间。
The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.