Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors
Effects of impurity and composition profiles on electrical characteristics of GaAsSb/InGaAs hetero-junction vertical tunnel field effect transistors
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DOI：
10.1063/1.4993823
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发表时间：
2017-11
影响因子：
3.2
通讯作者：
T. Gotow;M. Mitsuhara;T. Hoshi;H. Sugiyama;M. Takenaka;S. Takagi
中科院分区：
文献类型：
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作者：
T. Gotow;M. Mitsuhara;T. Hoshi;H. Sugiyama;M. Takenaka;S. Takagi
为了研究GaAsSb/InGaAs异质结的结构特性对垂直隧道场效应晶体管（TFFET）电学性能的影响，我们在InP衬底上制备了GaAs0.51Sb0.49/In0.53Ga0.47As异质结垂直隧道场效应晶体管（TFFET）。在297 K时，实验结果表明，在1.25 V的电压摆幅下，GaAs 0.51 Sb 0.49/In 0.53 Ga 0.47 As TFET的ION/IOFF比为1.02。在20 K时，由于源结漏电流的抑制，ION/IOFF比提高到104。对本异质结构的二次离子质谱分析表明，掺杂在GaAsSb源极区中的p型掺杂剂（Be）原子的浓度在InGaAs沟道区中以1.11nm/dec的反斜率降低。扫描透射电子显微镜-能量色散X-射线衍射X射线能谱表明，在离界面10 nm以内的区域，III族和V族成分发生突变。
We fabricated and characterized GaAs0.51Sb0.49/In0.53Ga0.47As hetero-junction vertical tunnel field effect transistors (TFETs) on InP substrates in order to examine the effects of the structural characteristics of GaAsSb/InGaAs hetero-structures on the electrical properties of the TFETs. The operation of the fabricated GaAs0.51Sb0.49/In0.53Ga0.47As TFET was confirmed with the ION/IOFF ratio of ∼102 over VG swing of 1.25 V at 297 K. This ION/IOFF ratio was improved up to ∼104 at 20 K, thanks to the suppression of the leakage current in the source junction. The secondary ion mass spectrometry analyses for the present hetero-structures have revealed that the concentration of the p-type dopant (Be) atoms, doped in the GaAsSb source regions, decreases in the InGaAs channel regions at an inverse slope of ∼11 nm/dec. Also, the scanning transmission electron microscope-energy dispersive X-ray spectroscopy has shown that group III and V compositions change abruptly in a region within 10 nm from the interface betwe...