Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.
Effect of interface chemistry on the growth of ZnSe on the Si(100) surface.
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界面化学对 Si(100) 表面 ZnSe 生长的影响。
DOI：
10.1103/physrevb.45.13400
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发表时间：
1992
期刊：
影响因子：
--
通讯作者：
Tramontana
中科院分区：
文献类型：
--
作者：
Bringans;Biegelsen;Swartz;Ponce;Tramontana
化合物半导体在硅表面的异质外延生长强烈地受到界面化学键的影响。在这项工作中，通过分子束外延在Si（100）表面上生长ZnSe已主要通过透射电子显微镜（TEM）进行了研究。在界面形成过程中的主要作用是Si和Se反应形成非晶化合物${\mathrm{SiSe}}_{2}$的趋势。通过利用一些生长技术，我们已经能够表征的界面反应，并将描述的反应可以最小化的方法。对于在高温下生长的ZnSe薄膜，TEM图像显示在界面处存在厚的（\ensuremath{\sim}100 nm）非晶层。对于在室温下沉积在Si（100）上然后通过固相外延结晶的膜，我们没有发现非晶层，但是键合到Si表面的Se的亚单层可能引起Si和ZnSe晶体之间的取向差以及观察到的大面积的孪晶ZnSe。我们讨论的倾斜和观察，孪生区只存在于两个允许的配置之一的机制。发现在ZnSe生长之前在Si（100）表面上存在砷单层可以防止Si和Se之间的任何反应，并且我们发现平行外延生长没有任何显著的孪晶。对于通过室温沉积和固相外延或在Si（100）：As上生长ZnSe，我们获得非常均匀的膜。这与硅基砷化镓外延的情况相反，在硅基砷化镓外延中，岛的形成在相当的厚度下占主导地位。提出了使用ZnSe作为GaAs-on-Si生长的中间层。
Heteroepitaxial growth of compound semiconductors on Si surfaces is strongly affected by the chemical bonding at the interface. In this work, the growth of ZnSe on Si(100) surfaces by molecular-beam epitaxy has been investigated primarily by transmission electron microscopy (TEM). The dominant effect during interface formation is the tendency of Si and Se to react to form the amorphous compound ${\mathrm{SiSe}}_{2}$. By utilizing a number of growth techniques, we have been able to characterize the interface reaction and will describe methods where the reaction can be minimized. For ZnSe films grown at elevated temperatures, TEM images show the presence of a thick (\ensuremath{\sim}100 nm) amorphous layer at the interface. For films deposited on Si(100) at room temperature and then crystallized by solid-phase epitaxy, we find no amorphous layer, but submonolayers of Se bonded to the Si surface may give rise to a misorientation between the Si and ZnSe crystals and to the large areas of twinned ZnSe that are observed. We discuss mechanisms for the tilt and for the observation that the twinned areas exist only in one of the two allowed configurations. The presence of an arsenic monolayer on the Si(100) surface prior to ZnSe growth is found to prevent any reaction between Si and Se and we find parallel epitaxial growth without any significant twinning. For growth of ZnSe either via room-temperature deposition and solid-phase epitaxy or on Si(100):As, we obtain very uniform films. This is in contrast to the situation for GaAs-on-Si epitaxy where island formation is dominant at comparable thicknesses. The use of ZnSe as an interlayer for GaAs-on-Si growth is proposed.