Periodic Array of Polyelectrolyte-Gated Organic Transistors from Electrospun Poly(3-hexylthiophene) Nanofibers
Periodic Array of Polyelectrolyte-Gated Organic Transistors from Electrospun Poly(3-hexylthiophene) Nanofibers
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DOI：
10.1021/nl903722z
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发表时间：
2010-01-01
期刊：
影响因子：
10.8
通讯作者：
Jeong, Unyong
中科院分区：
文献类型：
--
作者：
Lee, Sung W.;Lee, Hyun J.;Jeong, Unyong
高性能有机场效应。在柔性聚合物衬底上制备了基于电纺聚3-己基噻吩（P3 HT）纳米纤维和双栅电介质的晶体管（OFFET）。使用包括离子液体的UV交联的水凝胶作为绝缘层使得能够快速且大面积地制造晶体管阵列。将P3 HT纳米纤维直接沉积在甲基丙烯酸酯化的聚合物基底上。在通过图案化掩模的UV照射期间，甲基丙烯酸酯基团与图案化的介电层形成共价键，这为器件提供了机械稳定性。OFFET在小于2 V的电压下工作。平均场效应迁移率和开/关比分别类似于2cm（2）/（Vs）和10（5）。
High-performance organic field-effect. transistors (OFETs) based on polyelectrolyte gate dielectric and electrospun poly(3-hexylthiophene) (P3HT) nanofibers were fabricated oil a flexible polymer substrate. The use of UV-crosslinked hydrogel including ionic liquids for the insulating layer enabled fast and large-area fabrication of transistor arrays. The P3HT nanofibers were directly deposited on the methacrylated polymer substrate. During UV irradiation through a patterned mask, the methacrylate groups formed covalent bonds with the patterned polyelectrolyte dielectric layer, which provides mechanical stability to the devices. The OFETs operate at voltages of less than 2 V. The average field-effect mobility and on/off ratio were similar to 2 cm(2)/(Vs) and 10(5), respectively.