The synthesis of metal oxide nanowires by directly heating metal samples in appropriate oxygen atmospheres
The synthesis of metal oxide nanowires by directly heating metal samples in appropriate oxygen atmospheres
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DOI：
10.1088/0957-4484/14/7/308
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发表时间：
2003-07-01
期刊：
影响因子：
3.5
通讯作者：
Fan, SS
中科院分区：
文献类型：
--
作者：
Dang, HY;Wang, J;Fan, SS
通过在混合气体流（20% O-2、80% Ar，总流量为 120 sccm）中简单地将所需金属粉末加热至其熔点以上的温度，成功合成了 ZnO、MgO 和 GeO2 纳米线。透射电子显微镜观察表明，合成的产物完全是纳米线，结构均匀且单晶。同样的技术也被用来在硅基板上制造 ZnO 纳米线阵列，这对于直接集成到当前基于硅技术的光电器件中特别有意义。根据我们的实验结果，提出并概念性地描述了金属自催化生长机制。由于整个生长过程中不存在过渡金属或贵金属等杂质，因此可以表达和利用所得金属氧化物纳米线的固有特性。随着对生长机制的深入了解，我们的方法可以有效且可控地扩展到许多其他低熔点金属，例如Al、In和Sn，以合成相应的金属氧化物纳米结构。
ZnO, MgO, and GeO2 nanowires were successfully synthesized by simply heating the desired metal powder to a temperature above its melting point in a flow of mixed gases (20% O-2, 80% Ar, with the total flow rate of 120 seem). Transmission electron microscopy observations show that as-synthesized products are exclusively nanowires, structurally uniform and single crystalline. The same technique was used to fabricate arrays of ZnO nanowires on silicon substrates, which would be of particular interest for direct integration in the current silicon-technology-based optoelectronic devices. Based on our experimental results, a metal self-catalytic growth mechanism was proposed and described conceptually. Because of the absence of impurities such as transition metal or noble metal throughout the whole growth process, the intrinsic properties of the resulting metal oxide nanowires could be expressed and utilized. And with in-depth understanding of the growth mechanism, our method could be efficient and controllable in extension to many other low-melting-point metals, such as Al, In, and Sn, for the synthesis of corresponding metal oxide nanostructures.