Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect
复制标题
具有增强动态电场调制效应的 P 漂移区 N-IGBT 的数值分析
DOI：
10.1109/ted.2022.3165142
复制
发表时间：
2022-06
影响因子：
3.1
通讯作者：
Bo Zhang
中科院分区：
文献类型：
--
作者：
Xiaorui Xu;Wanjun Chen;Shuyi Zhang;Chao Liu;Ruize Sun;Zhaoji Li;Bo Zhang
本文研究了带p漂移区的n通道IGBT （N-IGBT）的基本物理机制和综合特性。与传统的N-IGBT （ND-IGBT）不同，PD-IGBT的主阻塞结（<inline-formula> < text -math符号="LaTeX">${J}_{\text {MB}}$ </ text -math></inline-formula>）从发射极侧改变到集电极侧，使动态电场调制的增强效果显著。基于该效应，PD-IGBT在漂移区具有快速的动态电场（E-field）建立速度，在场停止层（FS）边缘具有高的E-field，可以在关断瞬态期间快速提取器件中存储的多余载流子。从而减少了设备的关断损耗（<inline-formula> < text -math notation="LaTeX">${E}_{\rm {OFF}}}$ </ text -math></inline-formula>）和关断时间（<inline-formula> < text -math notation="LaTeX">${t}_{\rm {OFF}}$ </ text -math></inline-formula>）。此外，改变<inline-formula> < text -math符号="LaTeX">${J}_{\text {MB}}$ </ text -math></inline-formula>位置也可以缓解堑壕栅极角处的e场拥挤现象，从而优化击穿电压（BV）与导通电压的关系，获得较高的雪崩能量。仿真结果表明，与最先进的n通道ND-IGBT相比，PD-IGBT提供了46%的<inline-formula> < text -math符号="LaTeX">${t}_{\rm {OFF}}$ </ text -math></inline-formula>， 57%的<inline-formula> < text -math符号="LaTeX">${E}_{\rm {OFF}}$ </ text -math></inline-formula>，在不影响其他器件特性的情况下，雪崩能量增加60%。
This article studies the underlying physical mechanism and comprehensive characteristics of the N-channel IGBT (N-IGBT) with P-drift region (PD-IGBT). Distinguishing from the conventional N-IGBT with N-drift region (ND-IGBT), the main blocking junction (<inline-formula> <tex-math notation="LaTeX">${J}_{\text {MB}}$ </tex-math></inline-formula>) of the PD-IGBT is changed from the emitter side to the collector side, which leads to a significant enhancement effect of dynamic electric field modulation. Based on the effect, the PD-IGBT features fast dynamic electric field (E-field) building speed in the drift region and a high E-field at the edge of the field-stop (FS) layer, which can extract excess carriers stored in the device rapidly during the turn-off transient, thus reducing the turn-off loss (<inline-formula> <tex-math notation="LaTeX">${E}_{\rm {OFF}}$ </tex-math></inline-formula>) and turn-off time (<inline-formula> <tex-math notation="LaTeX">${t}_{\rm {OFF}}$ </tex-math></inline-formula>) of the device. Moreover, the change of <inline-formula> <tex-math notation="LaTeX">${J}_{\text {MB}}$ </tex-math></inline-formula> location can also alleviate the E-field crowding phenomenon at the trench gate corner, thus providing an optimized relationship between breakdown voltage (BV) and ON-state voltage, as well as high avalanche energy. Simulation results show that, when compared with the state-of-the-art N-channel ND-IGBT, the PD-IGBT offers 46% shorter <inline-formula> <tex-math notation="LaTeX">${t}_{\rm {OFF}}$ </tex-math></inline-formula>, 57% lower <inline-formula> <tex-math notation="LaTeX">${E}_{\rm {OFF}}$ </tex-math></inline-formula>, and 60% larger avalanche energy without compromising other device characteristics.