Thermoelectric properties of B-doped SrTiO 3 singe crystal
Thermoelectric properties of B-doped SrTiO 3 singe crystal
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DOI：
10.1088/1742-6596/176/1/012042
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发表时间：
2009-06
期刊：
影响因子：
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通讯作者：
J. Okamoto;G. Shimizu;S. Kubo;Y. Yamada;H. Kitagawa;A. Matsushita;Y. Yamada;F. Ishikawa
中科院分区：
文献类型：
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作者：
J. Okamoto;G. Shimizu;S. Kubo;Y. Yamada;H. Kitagawa;A. Matsushita;Y. Yamada;F. Ishikawa
研究了硼对SrTiO3电学和热电性能的影响。硼掺杂的 SrTiO3 通过在硼蒸气存在下对 SrTiO3 单晶进行真空退火来制备。该晶体在室温下表现出约0.1 Ωcm的低电阻率和数百μV/K的高塞贝克系数。据估计，SrTiO3 晶体中几乎每个硼原子都提供了电荷载流子。塞贝克系数和品质因数 ZT 的温度依赖性被测量为载流子浓度的函数。
Effect of boron on the electric and thermoelectric properties of SrTiO3 has been studied. Boron-doped SrTiO3 was prepared by vacuum annealing of SrTiO3 single crystals in presence of boron vapors. The crystals show low resistivity ~0.1 Ωcm and high Seebeck coefficient of several hundreds μV/K at a room temperature. It was estimated that almost every boron atom incorporated in SrTiO3 crystal provided a charge carrier. Temperature dependence of Seebeck coefficient and figure of merit ZT were measured as a function of carrier concentration.