Selective epitaxial growth of graphene on SiC
Selective epitaxial growth of graphene on SiC
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DOI：
10.1063/1.2988645
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发表时间：
2008-09-22
影响因子：
4
通讯作者：
Camassel, J.
中科院分区：
文献类型：
--
作者：
Camara, N.;Rius, G.;Camassel, J.
我们提出了一种在“预图案化”碳化硅（SiC）衬底上选择性外延生长几层石墨烯（FLG）的方法。该方法涉及，连续，溅射的薄氮化铝（AlN）层的顶部上的单晶SiC衬底，然后，图案化它与电子束光刻和湿法蚀刻。来自SiC衬底的Si的几个原子层的升华仅通过选择性蚀刻的AlN层发生。在无AlN区域中类似于1582 cm（-1）处的拉曼G带的存在用于验证该概念。它提供了选择性FLG生长的绝对证据。(C)2008年美国物理学会。
We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at similar to 1582 cm(-1) in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth. (C) 2008 American Institute of Physics.