A new type of SiC-VJFET with extreme low feedback capacitance
A new type of SiC-VJFET with extreme low feedback capacitance
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一种具有极低反馈电容的新型SiC-VJFET
DOI：
10.1109/ispsd.2013.6694476
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发表时间：
2013
期刊：
影响因子：
--
通讯作者：
Koichi Nishikawa
中科院分区：
文献类型：
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作者：
T. Ishikawa;Katsuya Nomura;T. Sugiyama;T. Uesugi;Koichi Nishikawa
在本文中，我们提出了一种新的SiC垂直JFET（VJFET）的低反馈电容Crss使用的器件模拟器。所提出的VJFET的一个关键特征是插入在栅极和漏极之间的p+屏栅。与传统的VJFET相比，屏栅可以有效地将Crss降低80%。由于低Crss，所提出的VJFET的总功率损耗是现有SiC功率器件中最低的。这种新的VJFET可以是一个有前途的候选人的高速和低损耗的SiC功率器件。
In this paper, we propose a novel SiC vertical JFET (VJFET) with low feedback capacitance Crss by using a device simulator. A key feature of the proposed VJFET is the p+ screen grid inserted between gate and drain electrode. The screen grid is effective to reduce the Crss by 80% compared to conventional VJFETs. Due to the low Crss, total power loss of the proposed VJFET is the lowest among existing SiC power devices. This new VJFET can be a promising candidate for a high-speed and low-loss SiC power device.