Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
Indium Content Dependence of Electron Velocity and Impact Ionization in InAlAs/InGaAs Metamorphic HEMTs
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InAlAs/InGaAs 变质 HEMT 中电子速度和碰撞电离的铟含量依赖性
DOI：
10.1143/jjap.43.2259
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发表时间：
2004
影响因子：
1.5
通讯作者：
Toshi
中科院分区：
文献类型：
--
作者：
H. Ono;S. Taniguchi;Toshi
我们在GaAs上制备了x=0.36, 0.43和0.53的InxAl1-xAs/InxGa1-xAs变性高电子迁移率晶体管（MHEMTs），在InP上制备了x=0.53的晶格匹配（LM） HEMTs。利用hemt对不同铟含量的InGaAs通道中的电子速度和冲击电离进行了系统研究。电子速度由栅极长度与截止频率的关系决定。虽然高密度的晶体缺陷在mhemt的通道中传播，但电子速度不受缺陷的影响。在hemt的预击穿状态下，通过门电流分析研究了主导导通击穿电压的冲击电离现象。我们估计了InGaAs碰撞电离的特征电场。研究发现，当x=0.53时，MHEMT的冲击电离栅极电流小于LMHEMT，这可以解释为MHEMT中晶体缺陷增强了电子-空穴复合。
We have fabricated InxAl1-xAs/InxGa1-xAs metamorphic high electron mobility transistors (MHEMTs) with x=0.36, 0.43, and 0.53 on GaAs, and lattice-matched (LM) HEMTs with x=0.53 on InP. Using the HEMTs, we have carried out systematic studies on the electron velocity and the impact ionization in the InGaAs channels with several indium contents. The electron velocity is determined by the gate length dependence of cut-off frequency. Although high-density crystalline defects propagate into the channels of the MHEMTs, the electron velocity is not affected by the defects. Impact ionization phenomena, which dominate on-state breakdown voltage, have been investigated by gate-current analysis in the prebreakdown regime of the HEMTs. We have estimated the characteristic electric field of the impact ionization for InGaAs. It has been found that the gate current due to the impact ionization of the MHEMT with x=0.53 is smaller than that of the LMHEMT, which is explained by the enhanced electron-hole recombination by the crystalline defects in the MHEMT.