Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating
Plasma-enhanced chemical vapor deposited silicon carbide as an implantable dielectric coating
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DOI：
10.1002/jbm.a.10152
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发表时间：
2003-12-01
影响因子：
4.9
通讯作者：
Edell, R
中科院分区：
文献类型：
--
作者：
Cogan, SF;Edell, DJ;Edell, R
采用等离子体增强化学气相沉积法（PECVD）制备了非晶碳化硅（a-SiC）薄膜，并将其作为植入式微电极的绝缘涂层。将a-SiC沉积在铂或铱线上，用于测量在磷酸盐缓冲盐水（PBS，pH 7.4）中通过涂层的漏电。低漏电流，
Amorphous silicon carbide (a-SiC) films, deposited by plasma-enhanced chemical vapor deposition (PECVD), have been evaluated as insulating coatings for implantable microelectrodes. The a-SiC was deposited on platinum or iridium wire for measurement of electrical leakage through the coating in phosphate-buffered saline (PBS, pH 7.4). Low leakage currents of