Tailored energy level alignment at MoOX/GaP interface for solar-driven redox flow battery application
Tailored energy level alignment at MoOX/GaP interface for solar-driven redox flow battery application
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DOI：
10.1063/1.5136252
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发表时间：
2020-03-31
影响因子：
4.4
通讯作者：
Smith, Wilson A.
中科院分区：
文献类型：
--
作者：
Bae, Dowon;Kanellos, Gerasimos;Smith, Wilson A.
MoOX通常被认为是高功函数半导体。从X射线光电子能谱和光电化学分析，它表明，MoOX可以被认为是一个有效的空穴传输层的GaP基器件。具体地，在使用离子束清洁步骤而不存在碳污染的情况下，位于带隙内部的氧空位衍生的缺陷带成为主要的电荷转移机制。我们首次展示了具有MoOX/GaP结的器件，该器件用作具有AQS/AQSH（2）并联于I-/I-3（-）氧化还原对的氧化还原液流电池系统的无偏光充电电池。这项工作对于实现MoOX应用超越传统太阳能电池具有重要意义，包括电化学储能和化学转化系统。
MoOX is commonly considered to be a high work-function semiconductor. From x-ray photoelectron spectroscopy and photo-electrochemical analysis, it is shown that MoOX can be considered as an effective hole transfer layer for the GaP-based device. Specifically, in the absence of carbon contamination using an ion beam cleaning step, the oxygen vacancy derived defect band located inside the bandgap becomes the main charge transfer mechanism. We demonstrate, for the first time, a device with a MoOX/GaP junction that functions as an unbiased photo-charging cell for the redox flow battery system with AQS/AQSH(2)parallel to I-/I-3(-) redox couples. This work has important implications toward enabling MoOX applications beyond the conventional solar cells, including electrochemical energy storage and chemical conversion systems.