Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition
Growth process and properties of silicon nitride deposited by hot-wire chemical vapor deposition
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DOI：
10.1063/1.1542658
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发表时间：
2003-03
影响因子：
3.2
通讯作者：
B. Stannowski;J. Rath;R. Schropp
中科院分区：
文献类型：
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作者：
B. Stannowski;J. Rath;R. Schropp
热丝化学气相沉积（HWCVD）是一种在低温下沉积氮化硅层（a-SiNx：H）的有前途的技术。与常用的等离子体增强化学气相沉积相比，HWCVD中不存在离子轰击，这使得它对于在对高能离子的影响敏感的结构上沉积钝化层特别有吸引力。我们在300-500 °C的衬底温度范围内从硅烷和氨的混合物中存款热线a-SiNx：H。用氨/硅烷气体流量比R=30沉积的层接近化学计量（N/Si=1.33），氢含量约为10原子%。%.这种薄膜已经在热线a-Si：H薄膜晶体管中实现。当R>30时，薄膜中N含量没有增加，但多孔性增加。红外光谱显示，水分渗透这些层，氧气被纳入网络下的空气暴露。横截面透射电子显微镜
Hot-wire chemical vapor deposition (HWCVD) is a promising technique for the deposition of silicon nitride layers (a-SiNx:H) at low temperatures. In contrast to the commonly used plasma-enhanced chemical vapor deposition, no ion bombardment is present in HWCVD, which makes it particularly attractive for the deposition of passivation layers on structures that are sensitive to the impact of energetic ions. We deposit hot-wire a-SiNx:H from a mixture of silane and ammonia at substrate temperatures in the range of 300–500 °C. Layers deposited with an ammonia/silane gas-flow ratio of R=30 are close to stoichiometry (N/Si=1.33) with a hydrogen content around 10 at. %. Such films have been implemented in hot-wire a-Si:H thin-film transistors. Deposition with R>30 did not result in an increase of the N content, but led to more porous films. Infrared spectroscopy revealed that moisture penetrates these layers and that oxygen is incorporated in the network under air exposure. Cross-sectional transmission electron mi...