Temperature dependence of the fundamental band gap of InN
Temperature dependence of the fundamental band gap of InN
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DOI：
10.1063/1.1605815
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发表时间：
2003-10-01
影响因子：
3.2
通讯作者：
Schaff, WJ
中科院分区：
文献类型：
--
作者：
Wu, J;Walukiewicz, W;Schaff, WJ
用透射光谱和光致发光光谱测量了分子束外延生长的InN薄膜的基本带隙随温度的变化。带边吸收能量及其温度依赖性取决于掺杂水平。InN的带隙变化和Varshni参数与其他III族氮化物进行了比较。光致发光峰的能量受来自局域态的发射的影响，并且不能用于确定带隙能量。基于在两个具有明显不同电子浓度的样品上获得的结果，讨论了简并掺杂对InN光学性质的影响。(C)2003年，美国物理学会。
The fundamental band gap of InN films grown by molecular beam epitaxy have been measured by transmission and photoluminescence spectroscopy as a function of temperature. The band edge absorption energy and its temperature dependence depend on the doping level. The band gap variation and Varshni parameters of InN are compared with other group III nitrides. The energy of the photoluminescence peak is affected by the emission from localized states and cannot be used to determine the band gap energy. Based on the results obtained on two samples with distinctly different electron concentrations, the effect of degenerate doping on the optical properties of InN is discussed. (C) 2003 American Institute of Physics.