Ion-beam-induced densification of zirconia sol-gel thin films
Ion-beam-induced densification of zirconia sol-gel thin films
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离子束诱导氧化锆溶胶-凝胶薄膜致密化
DOI：
10.1111/j.1151-2916.1993.tb03769.x
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发表时间：
1993
影响因子：
3.9
通讯作者：
E. Giannelis
中科院分区：
文献类型：
--
作者：
T. Levine;J. Keddie;P. Révész;J. Mayer;E. Giannelis
用离子注入代替传统的热处理方法，实现了溶胶-凝胶氧化锆薄膜的致密化。观察到致密化与1014离子/平方厘米低的1014离子-离子剂量。离子注入导致氢和碳的损失，分别通过使用12 C（α，α）12 C共振的前向反冲弹性光谱（FRES）和卢瑟福背散射光谱（RBS）测量。最高剂量注入的溶胶-凝胶膜的密度和化学组成与通过高温烧结获得的那些相媲美。薄膜中的化学和微观结构的变化归因于电子相互作用和核碰撞之间的离子和目标原子。
Densification of sol–gel zirconia films was achieved using ion implantation instead of conventional heat treatment. Densification was observed with Xe+-ion doses as low as 1014 ions/cm2. Ion implantation resulted in hydrogen and carbon losses as measured by forward recoil elastic spectrometry (FRES) and Rutherford backscattering spectrometry (RBS) using 12C(α,α)12C resonance, respectively. The density and chemical composition of the highest-dose implanted sol–gel films were comparable with those obtained by high-temperature sintering. The chemical and microstructural modifications in the films were attributed to both electronic interactions and nuclear collisions between the Xe+ ions and the target atoms.