Effect of annealing temperature on dielectric behavior of PVDF thick films
Effect of annealing temperature on dielectric behavior of PVDF thick films
复制标题
退火温度对PVDF厚膜介电行为的影响
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
D. Singh
中科院分区：
文献类型：
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作者：
Shobhneek Kaur;D. Singh
采用溶液浇铸法制备了聚偏氟乙烯（PVDF）厚膜。将制造的膜在50°C、90°C、100°C和110°C下退火5小时。研究了退火对其结构、介电性能和电导率的影响。当退火温度达到100°C时，β相PVDF与α相共存，然后β相转变为α相。经100°C退火处理后，薄膜在103 ~ 105 Hz频率范围内的介电常数和正切损耗分别为11和0.025。采用溶液浇铸法制备了聚偏氟乙烯（PVDF）厚膜。将制造的膜在50°C、90°C、100°C和110°C下退火5小时。研究了退火对其结构、介电性能和电导率的影响。当退火温度达到100°C时，β相PVDF与α相共存，然后β相转变为α相。经100°C退火处理后，薄膜在103 ~ 105 Hz频率范围内的介电常数和正切损耗分别为11和0.025。PVDF厚膜的介电和导电性能的改善是由于界面和晶体结构的改变。
The polyvinylidene fluoride (PVDF) thick film has been fabricated by a solution casting method. The fabricated film is subjected to annealing at 50°C, 90°C, 100°C and 110°C for 5 hours. The effect of annealing on its structure, dielectric and conductivity is investigated. The β-phase PVDF is found to coexist with α-phase for annealing temperature upto 100°C, after that β-phase is converted to α-phase. The dielectric permittivity and tangent loss of film in the frequency range of 103 Hz to 105 Hz annealed at 100°C are 11 and 0.025 respectively. The improved behavior of dielectric and conductivity results from interface and crystal structure modification in the PVDF thick film.The polyvinylidene fluoride (PVDF) thick film has been fabricated by a solution casting method. The fabricated film is subjected to annealing at 50°C, 90°C, 100°C and 110°C for 5 hours. The effect of annealing on its structure, dielectric and conductivity is investigated. The β-phase PVDF is found to coexist with α-phase for annealing temperature upto 100°C, after that β-phase is converted to α-phase. The dielectric permittivity and tangent loss of film in the frequency range of 103 Hz to 105 Hz annealed at 100°C are 11 and 0.025 respectively. The improved behavior of dielectric and conductivity results from interface and crystal structure modification in the PVDF thick film.