Effects of Surface Roughness on Interface Bonding Performance for 316H Stainless Steel in Hot-Compression Bonding
Effects of Surface Roughness on Interface Bonding Performance for 316H Stainless Steel in Hot-Compression Bonding
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DOI:
10.1007/s40195-023-01533-8
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发表时间:
2023-02
期刊:
影响因子:
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通讯作者:
Yong Zhao;Bijun Xie;Jin-long Zhang;Qinqiang Wang;Bin Xu;Jiang Guo;Zhu-Ji Jin;R. Kang;
中科院分区:
文献类型:
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作者:
Yong Zhao;Bijun Xie;Jin-long Zhang;Qinqiang Wang;Bin Xu;Jiang Guo;Zhu-Ji Jin;R. Kang;
The metallurgical bonding quality of bonding joints is affected by the substrate surface state in hot-compression bonding (HCB), and the surface roughness is a core indicator of the surface state. However, the effects of surface roughness on interface bonding performance (IBP) in the HCB process are unclear for substrates with refractory oxide scales. This study presents the effects of surface roughness on IBP for 316H stainless steel joints fabricated by HCB. A set of HCB parameters for interface bonding critical state of 316H stainless steel joints was determined. The HCB experiments were carried out under parameters of interface bonding critical state to amplify the effect of surface roughness. The interface morphologies, element distribution, and tensile properties were used to characterize the IBP. As a result, the formation mechanisms of the interface pits were revealed and the variation trend of pit number with the roughness was summarized. Finally, the mapping relation between surface roughness and IBP was established. The results show that the degree of rotational dynamic recrystallization becomes weaker with the decrease in the surface roughness and the interface bonding mechanism is completely transformed into discontinuous dynamic recrystallization when the roughness is lower than 0.020 μmSa. The number of interfacial pits decreases as the roughness decreases owing to the weakening of oxide scale aggregation and abrasive inclusion mechanism. The elongation of the tensile specimen cannot increase significantly while the roughness is lower than 0.698 μmSa.