Fabrication of high-J(C) BaTiO3-doped YBa2Cu3O7-delta thin films by the low-fluorine TFA-MOD approach

Fabrication of high-J(C) BaTiO3-doped YBa2Cu3O7-delta thin films by the low-fluorine TFA-MOD approach
复制标题

采用低氟 TFA-MOD 方法制备高 J(C) BaTiO3 掺杂 YBa2Cu3O7-δ 薄膜

DOI:
10.1016/j.jallcom.2015.12.220
复制
发表时间:
2016
影响因子:
6.2
通讯作者:
Qu Fei
Qu Fei
中科院分区:
材料科学2区
文献类型:
--
作者:
Zhang Huiliang;Ding Fazhu;Gu Hongwei;Dong Zebin;Qu Fei

文献摘要

被引文献

相似文献

采用低氟三氟醋酸酯-金属-有机共沉淀法,以Y:BA:Cu3:−δ=1.0:1.8:3.0的摩尔比,制备了具有BaTiO(BTO)纳米结构的YBa2Cu3O7薄膜。对于YBCO薄膜,获得了高的超导临界电流密度(Jc)(77℃,自场),其电流密度为10 mA/cm2。这主要是由于BTO和Y2Cu2O5纳米结构在YBCO薄膜中增强了磁通钉扎作用。此外,还研究了热解阶段不同保温温度对最终的BTO掺杂YBCO薄膜的微观结构和超导性能的影响。随着保温温度的升高,BTO掺杂的YBCO薄膜表面越致密,YBCO(005)摇摆曲线的半高宽(FWHM)值越小,JC值越高。
YBa2Cu3O7−δ(YBCO) films with BaTiO3(BTO) nanostructures were prepared by the low-fluorine trifluoroacetate-metal-organic deposition process using the precursor solution with the molar ratio of Y:Ba:Cu = 1.0:1.8:3.0. The high superconducting critical current density (JC) (77 K, self-filed) of 10 MA/cm2for YBCO films was obtained. This result arises mainly from the enhanced flux pinning by BTO and Y2Cu2O5nanostructures in YBCO films. Moreover, the influence of the different holding temperatures at the pyrolysis step on the microstructure and superconducting properties of the final BTO-doped YBCO films was investigated. With increasing the holding temperature, denser surface, smaller full-width at half-maximum (FWHM) value of the YBCO (005) rocking curves and higherJCvalue were found in the BTO-doped YBCO films.