Simple K-band MMIC VCO utilizing a miniaturized hairpin resonator and a three-terminal p-HEMT varactor with low phase noise and high output power properties
Simple K-band MMIC VCO utilizing a miniaturized hairpin resonator and a three-terminal p-HEMT varactor with low phase noise and high output power properties
复制标题
简单的 K 频段 MMIC VCO，采用小型发夹谐振器和三端 p-HEMT 变容二极管，具有低相位噪声和高输出功率特性
DOI：
10.1109/lmwc.2003.814595
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发表时间：
2003
影响因子：
3
通讯作者：
Jong
中科院分区：
文献类型：
--
作者：
Cheol;Jeong;Jeong;Noh;Jong
提出了一种采用0.25 /spl μ m AlGaAs/InGaAs伪晶HEMT技术实现的全单片k波段MMIC压控振荡器（VCO）。采用半波长小型化发夹谐振器和三端p-HEMT变容管，在不影响电路性能的情况下，有效地减小了微波MMIC压控振荡器的芯片尺寸，简化了制造工艺。VCO在20.8 GHz时的典型输出功率为11.5 dBm，在100khz偏置时的自由运行相位噪声为-82 dBc/Hz，在1mhz偏置时为-95 dBc/Hz。它还显示了70 MHz的调谐范围，输出功率几乎没有降低，产量高。MMIC VCO的芯片尺寸为1.5 / sp1倍/ 2.0 mm/sup 2/。
Presents a fully monolithic K-band MMIC voltage-controlled oscillator (VCO) implemented by using a 0.25 /spl mu/m AlGaAs/InGaAs pseudomorphic HEMT (p-HEMT) technology. The use of a half-wavelength miniaturized hairpin-shaped resonator and a three-terminal p-HEMT varactor was effective in reducing the chip size and simplifying fabrication processes of the microwave MMIC VCO without impairing the performance of the circuit. The VCO provides a typical output power of 11.5 dBm at 20.8 GHz and a free-running phase noise of -82 dBc/Hz at 100 kHz offset and -95 dBc/Hz at 1 MHz offset. It also shows a tuning range of 70 MHz with little reduction in output power and high yield properties. The chip size of the MMIC VCO is 1.5 /spl times/ 2.0 mm/sup 2/.