Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing
Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing
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DOI：
10.1021/acs.cgd.2c00943
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发表时间：
2022-11
期刊：
影响因子：
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通讯作者：
Wei Guo;Li Chen;Houqiang Xu;Qiushuang Chen;Kunzi Liu;Tian Luo;Jiean Jiang;Haichen Wu;Guoxin Chen;Huan-ming Lu;J. Ye
中科院分区：
文献类型：
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作者：
Wei Guo;Li Chen;Houqiang Xu;Qiushuang Chen;Kunzi Liu;Tian Luo;Jiean Jiang;Haichen Wu;Guoxin Chen;Huan-ming Lu;J. Ye
反转畴是在蓝宝石衬底上生长的n -极性iii -氮化物薄膜中常见的缺陷。本文研究了n极性AlN薄膜中随机分布的al极性纳米级IDs的原子结构和横向迁移。随着退火温度和退火时间的增加，al极性AlN id的尺寸逐渐缩小。竖条纹在AlN柱顶部变成锥形帽状，最后被完全移除。反演畴边界（IDB）两侧应变状态的不平衡导致了反演畴边界（IDB）的横向迁移，从而解释了反演畴的湮灭。本工作阐明了AlN id在高温退火过程中的演化机制，为实现均匀极性AlN模板，开发高效光电和电子器件提供了一条有前途的途径。
Inversion domains (IDs) are common defects in N-polar III-nitride thin films grown on sapphire substrates. In this work, the atomic structure and lateral migration of the randomly distributed Al-polar nanoscale IDs in N-polar AlN films subjected to high-temperature thermal annealing are investigated. With the increasing annealing temperature and time, Al-polar AlN IDs gradually shrunk in sizes. The vertical stripes transformed into cone-shaped caps on top of the AlN columns and were completely removed at last. The annihilation of the IDs was explained in terms of the lateral migration of the inversion domain boundary (IDB) induced by the imbalance of the strain state on two sides of the IDB. This work clarifies the evolution mechanism of AlN IDs during high-temperature annealing, providing a promising approach in the realization of uniform-polar AlN template for the development of high-efficiency optoelectronic and electronic devices.