GaAs manufacturing processes conditions for micro- and nanoscale devices
GaAs manufacturing processes conditions for micro- and nanoscale devices
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DOI：
10.1016/j.jmapro.2020.11.006
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发表时间：
2020-12-01
影响因子：
6.2
通讯作者：
Herth, E.
中科院分区：
文献类型：
--
作者：
Joint, F.;Abadie, C.;Herth, E.
高深宽比蚀刻是制造III-V族半导体器件的关键方面。对具有各种特征长度（从微米到纳米尺度）的各种几何形状的需求不断增加，需要不断开发新的蚀刻配方。在这篇文章中，我们展示了一个多功能的掩模等离子体组合的GaAs衬底的微和纳米fabetries使用电感耦合等离子体反应离子刻蚀（ICP-RIE）系统。我们确定了五个配方在25摄氏度，具有高选择性，并将它们应用于一个光刻胶（AZ 4562）和两个硬（铬和镍）掩模。优化的蚀刻等离子体化学（BCl 3/Cl-2/Ar/N-2）显示出在GaAs上的图案转移具有高速率（>= 5.5 μ m/min）、高各向异性、高选择性（使用光致抗蚀剂掩模>4：1，使用硬掩模>50：1）、良好的蚀刻表面形态和光滑的侧壁轮廓（>88度）。在此，我们详细介绍了需求定义，详细配方的工程过程，验证和三种设备几何形状（脊，圆柱体和纳米柱）的验证。所提出的结果可以是有价值的，从微米级到纳米级的广泛的应用，并兼容的制造过程中只使用一个商业ICP-RIE工具与两个室专用，分别为金属掩模和光刻胶掩模。
High aspect-ratio etchings are a key aspect of the fabrication of III-V semiconductor devices. The increasing demand for diverse geometries with various characteristic lengths (from the micro- to the nano-meter scale) requires the constant development of new etching recipes. In this article, we demonstrate a versatile mask-plasma combination for micro- and nanofabrication of GaAs substrate using an Inductive Coupled Plasma Reactive Ion Etching (ICP-RIE) system. We identify five recipes at 25 degrees C, with high selectivity, and apply them on one photoresist (AZ4562) and two hard (chromium and nickel) masks. The optimized etching plasma chemistry (BCl3/Cl-2/Ar/N-2) shows a pattern transfer on GaAs with a high rate (>= 5.5 mu m/min), a high anisotropy, a high selectivity (>4:1 with photoresist mask, and >50:1 with hard masks), a good etch surface morphology, and smooth sidewalls profile (>88 degrees). Herein, we detail the requirements definition, the engineering processes with detailed recipes, the verification, and validation of three device geometries (ridges, cylinders, and nano pillars). The presented results can be valuable for a wide range of applications from the microscale to the nanoscale, and are compatible with a manufacturing process using only a single commercial ICP-RIE tool with two chambers dedicated, respectively, for metallic masks and photoresist mask.