Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy
Correlation between background carrier concentration and x‐ray linewidth for InGaAs/InP grown by vapor phase epitaxy
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气相外延生长的 InGaAs/InP 背景载流子浓度与 X 射线线宽之间的相关性
DOI：
10.1063/1.94853
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发表时间：
1984
影响因子：
4
通讯作者：
W. D. Johnston
中科院分区：
文献类型：
--
作者：
A. Macrander;S. Chu;K. Strege;A. Bloemeke;W. D. Johnston
通过氢化物工艺生长的名义上未掺杂的 InGaAs/InP 的背景载流子浓度被发现与 X 射线线宽相关。双晶衍射仪用于测量平行于（100）表面的失配以及更标准的垂直失配。一般来说，发现外延层呈四方扭曲，并且发现线宽与平行失配相关。确定了两种载流子浓度方案，一种用于没有平行失配的样品，另一种用于具有平行失配的样品。在后一种情况下，容纳失配应变（例如失配位错）的晶格缺陷被认为是载流子浓度的原因。
The background carrier concentration of nominally undoped InGaAs/InP grown by the hydride process was found to correlate to the x‐ray linewidth. A double crystal diffractometer was used to measure the mismatch parallel to the (100) surface as well as the more standard perpendicular mismatch. The epitaxial layers were, in general, found to be tetragonally distorted, and the linewidth was found to correlate to the parallel mismatch. Two regimes for the carrier concentration were identified, one for samples having no parallel mismatch and one for samples with parallel mismatch. In the latter case lattice defects which accommodated the misfit strain such as misfit dislocations are concluded to have been responsible for the carrier concentration.