Structural, Optical, and Electrical Properties of Nb-Doped ZnO Thin Films Prepared by Spray Pyrolysis Method
Structural, Optical, and Electrical Properties of Nb-Doped ZnO Thin Films Prepared by Spray Pyrolysis Method
复制标题
DOI：
10.1007/s11664-011-1755-1
复制
发表时间：
2011-10
影响因子：
2.1
通讯作者：
V. Gokulakrishnan;S. Parthiban;K. Jeganathan;K. Ramamurthi
中科院分区：
文献类型：
--
作者：
V. Gokulakrishnan;S. Parthiban;K. Jeganathan;K. Ramamurthi
铌（Nb）掺杂（0 at）%到3 at。在衬底温度为400℃的条件下，化学喷雾热解法制备的ZnO薄膜的光学和电学性能得到了提高，但薄膜的结构质量却有所下降。薄膜为六边形多晶结构，沿（002）晶体学方向优先取向。薄膜中掺杂了3at。% Nb在可见光区的最大平均透过率为~83%。在纯膜和掺杂膜中都记录到强蓝色发射，并且由于界面和价带跃迁，Nb掺杂大大增强了强度。在400°C下真空退火60分钟，提高了薄膜的电特性，1 at的最高迁移率达到71 cm2/V s。% nb掺杂ZnO薄膜。
Niobium (Nb) doping (0 at.% to 3 at.%) in ZnO thin films prepared by the chemical spray pyrolysis method at a substrate temperature of 400°C enhances the optical and electrical properties but deteriorates the structural quality of the films. The films are polycrystalline with hexagonal structure having a preferential orientation along the (002) crystallographic direction. The film doped with 3 at.% Nb demonstrates a maximum average transmittance of ~83% in the visible region. A strong blue emission is recorded for both pure and doped films, and the intensity is substantially enhanced with Nb doping due to interface and valence-band transitions. Vacuum annealing at 400°C for 60 min improves the electrical characteristics of the films, and the highest mobility of 71 cm2/V s is achieved for the 1 at.% Nb-doped ZnO films.