Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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DOI：
10.1038/nmat2382
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发表时间：
2009-03-01
期刊：
影响因子：
41.2
通讯作者：
Seyller, Thomas
中科院分区：
文献类型：
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作者：
Emtsev, Konstantin V.;Bostwick, Aaron;Seyller, Thomas
石墨烯是一种单层石墨，由于其新颖的磁输运特性（1-3）、高载流子迁移率和室温下的弹道输运特性(4)，最近引起了相当大的兴趣。作为摩尔定律后时代硅的继承者（5-7），作为单分子气体传感器(8)，自旋电子学（9-11），量子计算（12）或太赫兹振荡器（13），它具有潜在的技术应用潜力。对于这种应用，石墨烯在绝缘衬底上均匀有序生长是必要的。此前有人提出通过真空高温退火在绝缘碳化硅（SiC）表面生长石墨烯，为石墨烯基器件的大规模生产开辟了道路（5,6）。然而，真空分解SiC得到的石墨烯层具有小晶粒（30-200 nm；参考文献14-16）。在这里，我们证明了si端SiC（0001）在约1 bar的氩气气氛中非原位石墨化产生的单层石墨烯薄膜具有比以前可获得的更大的畴尺寸。拉曼光谱和霍尔测量证实了薄膜质量的提高。在T = 27 K时发现了高的电子迁移率，达到mu = 2,000 cm(2) V-1 s（-1）。这里介绍的新生长工艺建立了一种在技术上可行的基础上合成石墨烯薄膜的方法。
Graphene, a single monolayer of graphite, has recentlyattracted considerable interest owing to its novel magneto-transport properties(1-3), high carrier mobility and ballistic transport up to room temperature(4). It has the potential for technological applications as a successor of silicon in the post Moore's law era(5-7), as a single-molecule gas sensor(8), in spintronics(9-11), in quantum computing(12) or as a terahertz oscillator(13). For such applications, uniform ordered growth of graphene on an insulating substrate is necessary. The growth of graphene on insulating silicon carbide (SiC) surfaces by high-temperature annealing in vacuum was previously proposed to open a route for large-scale production of graphene-based devices(5,6). However, vacuum decomposition of SiC yields graphene layers with small grains (30-200 nm; refs 14-16). Here, we show that the ex situ graphitization of Si-terminated SiC(0001) in an argon atmosphere of about 1 bar produces monolayer graphene films with much larger domain sizes than previously attainable. Raman spectroscopy and Hall measurements confirm the improved quality of the films thus obtained. High electronic mobilities were found, which reach mu = 2,000 cm(2) V-1 s(-1) at T = 27 K. The new growth process introduced here establishes a method for the synthesis of graphene films on a technologically viable basis.