Thin films of high- k dysprosium scandate prepared by metal organic chemical vapor deposition for metal-insulator-metal capacitor applications
Thin films of high- k dysprosium scandate prepared by metal organic chemical vapor deposition for metal-insulator-metal capacitor applications
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采用金属有机化学气相沉积法制备高 k 钪酸镝薄膜,用于金属-绝缘体-金属电容器应用
DOI:
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发表时间:
2008
期刊:
影响因子:
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通讯作者:
R. Waser
中科院分区:
文献类型:
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作者:
Reji Thomas;J. Saavedra;N. Karan;N. M. Murari;R. Katiyar;P. Ehrhart;R. Waser