Threshold energy for atomic displacement in InP.
Threshold energy for atomic displacement in InP.
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InP 中原子位移的阈值能量。
DOI：
10.1103/physrevb.34.2470
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发表时间：
1976
期刊：
影响因子：
--
通讯作者：
Bourgoin
中科院分区：
文献类型：
--
作者：
Massarani;Bourgoin
通过深能级瞬态光谱测量在室温电子辐照p-斜体型InP中检测到的两个空穴陷阱（H4和H5）的缺陷引入率的各向异性已被用来确定所产生的缺陷所属的亚晶格。看来H5缺陷属于铟亚晶格，并且证实H4缺陷属于磷亚晶格。利用 H4 和 H5 的引入速率随电子能量的变化，推导出 P 原子位移的阈值能量为 8 eV，In 原子在两个晶体方向 In(111) 和 P(111) 上的位移阈值能量分别为 3 和 4 eV。提出了考虑初级碰撞原子与第一和第二邻居的二次碰撞的模型来解释针对 H5 缺陷测量的各向异性比曲线的复杂行为。
The anisotropy of the defect introduction rates of two hole traps (H4 and H5) detected by deep-level transient spectroscopy measurements in room-temperature electron-irradiated p-italic-type InP has been used to determine the sublattice to which the created defects belong. It appears that the H5 defect belongs to the indium sublattice and it is confirmed that the H4 defect belongs to the phosphorus sublattice. Using the variations of the introduction rates of H4 and H5 with the electron energy, a threshold energy of 8 eV is deduced for P-atom displacement and of 3 and 4 eV for In-atom displacement in the two crystallographic directions In(111) and P(111), respectively. A model taking into account the secondary collisions of the primary knock-on atom with the first and second neighbors is proposed to explain the complex behavior of the anisotropy ratio curve measured for the H5 defect.