High Performance and Low Energy Consumption in Phase Change Material RF Switches
High Performance and Low Energy Consumption in Phase Change Material RF Switches
复制标题
相变材料射频开关的高性能和低能耗
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
F. Podevin
中科院分区：
文献类型：
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作者：
A. Léon;B. Reig;V. Puyal;E. Perret;P. Ferrari;F. Podevin
介绍了一种基于碲化锗相变材料的射频-毫米波开关。提出了一种与标准CMOS后端线兼容的集成工艺来实现直接加热开关。在高达65 GHz的频率下进行的RF测量显示，导通状态电阻为$mathbf{1} Ω $，关断状态电容为7 fF，对应于22 THz的截止频率，这构成了最先进的品质因数。两种相变的开关时间仅为60 ns，能耗比结晶技术的最新水平低十倍。的GeTe尺寸的几何变化示出了RF性能的线性演化的导通状态的电阻和在OFF状态下的性能几乎不变。
This paper presents a RF to mm-wave switch based on Germanium Telluride phase change material. An integration process compatible with a standard CMOS back end of line is proposed to realize directly heated switches. RF measurements, performed up to 65 GHz, show an ON-state resistance of $mathbf{1}Omega$ with an OFF-state capacitance of 7 fF corresponding to a 22 THz cutoff frequency which constitutes a state-of-the-art Figure-of-Merit. Switching time of only 60 ns in both phase changes allow energy consumption one decade lower than the state-of-the-art for crystallization. A geometrical variation of GeTe dimensions shows a linear evolution of RF performance in terms of ON-state resistance and an almost unchanged performance in the OFF-state.