Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films
Improvement in aligned GaN nanowire growth using submonolayer Ni catalyst films
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DOI：
10.1063/1.2965798
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发表时间：
2008-07
影响因子：
4
通讯作者：
Qiming Li;George T. Wang
中科院分区：
文献类型：
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作者：
Qiming Li;George T. Wang
报道了一种利用亚单层厚度的超薄Ni催化膜在蓝宝石衬底上制备超高密度、高取向单晶GaN纳米线的方法。发现纳米线密度和取向程度对1 nm以下的镍催化膜厚度的变化高度敏感，这是以前在催化纳米线生长中很少探索的区域。对于蓝宝石上的亚单层Ni薄膜，Ni在蓝宝石表面的高扩散激活能归因于形成了尺寸分布窄的高密度和超小的Ni岛，这反过来又导致了高密度和高取向的GaN纳米线。
We report a route to ultrahigh-density and highly aligned single-crystalline GaN nanowires on sapphire by employing ultrathin Ni catalyst films with submonolayer thickness. The nanowire density and the degree of alignment were found to be highly sensitive to changes in the Ni catalyst film thickness below 1nm, a regime rarely explored in catalyzed nanowire growth before. For submonolayer Ni films on sapphire, high activation energy for Ni diffusion on sapphire surface is attributed to the formation of high-density and ultrasmall Ni islands with a narrow size distribution, which in turn leads to high-density and highly aligned GaN nanowires.