Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities
Emission properties of high-Q silicon nitride photonic crystal heterostructure cavities
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DOI：
10.1063/1.2958346
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发表时间：
2008-07-14
影响因子：
4
通讯作者：
Benson, Oliver
中科院分区：
文献类型：
--
作者：
Barth, Michael;Nuesse, Nils;Benson, Oliver
我们报道了由氮化硅（SiN）制成的光子晶体（PC）双异质结构腔的制备和光学表征。SiN薄膜的本征发光被用作可见光波长范围（600-700 nm）内的内部光源，以研究腔模式的品质因数和偏振特性。实验中发现质量因子高达3400，这是迄今为止在低指数PC中报道的最高值。这些结果突出了SiN作为可见光PC器件的有前途的材料系统的作用。(C)2008年美国物理学会。
We report on the fabrication and optical characterization of photonic crystal (PC) double-heterostructure cavities made from silicon nitride (SiN). The intrinsic luminescence of the SiN membranes was used as an internal light source in the visible wavelength range (600-700 nm) to study the quality factor and polarization properties of the cavity modes. Quality factors of up to 3400 were found experimentally, which represents the highest value reported so far in low-index PCs. These results highlight the role of SiN as a promising material system for PC devices in the visible. (C) 2008 American Institute of Physics.