Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current-Voltage and Capacitance-Voltage Measurements
Understanding of the Switching Mechanism of a Pt/Ni-Doped SrTiO3 Junction via Current-Voltage and Capacitance-Voltage Measurements
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DOI：
10.1143/jjap.47.8749
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发表时间：
2008-12-01
影响因子：
1.5
通讯作者：
Hwang, Hyunsang
中科院分区：
文献类型：
--
作者：
Seong, Dong-Jun;Lee, Dongsoo;Hwang, Hyunsang
研究了Pt/Nb掺杂SrTiO_3（Nb：STO）单晶肖特基结的电学性质。该结在直流偏置下表现出很高的整流电流-电压（1-V）特性。为了制作结的剖面，测量了反向偏置下的电容-电压（C-V）曲线，该曲线显示肖特基势垒高度变化很小。采用金属氧化物半导体（MOS）电容模型克服了Nb：STO氧化物的大漏电流问题。在此基础上，我们提出了一种可能的Pt/Nb：STO肖特基结的开关机制，即隧道效应是开关的主要原因。[DOI 10.1143/JJAP.47.8749]
We investigated the electrical properties of a Pt/Nb-doped SrTiO3 (Nb:STO) single crystal Schottky junction. The junction exhibited highly rectifying current-voltage (1-V) characteristics under a DC bias, To make a junction profile, the capacitance-voltage (C-V) curve for reverse bias was measured-the Curve showed little change in Schottky barrier height. The large 0 leakage current problem of Nb:STO oxide was overcome using an ultrathin metal-oxide-semiconductor (MOS) capacitor model. On the basis of Our results and previous reports, we propose a plausible mechanism for a Pt/Nb:STO Schottky junction, where the tunneling effect is the main cause of the switching. [DOI: 10.1143/JJAP.47.8749]