Spectroscopy Studies of Temperature-Induced Valence Transition on EuNi2(Si1-xGex)2 around Eu 3d–4f, 4d–4f and Ni 2p–3d Excitation Regions
Spectroscopy Studies of Temperature-Induced Valence Transition on EuNi2(Si1-xGex)2 around Eu 3d–4f, 4d–4f and Ni 2p–3d Excitation Regions
复制标题
Eu 3d–4f、4d–4f 和 Ni 2p–3d 激发区周围 EuNi2(Si1-xGex)2 温度诱导价态跃迁的光谱研究
DOI:
10.1143/jpsj.71.148
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发表时间:
2002
影响因子:
1.7
通讯作者:
A. Kotani
中科院分区:
文献类型:
--
作者:
T. Kinoshita;Heralu Pathirannehelage Nihal Jayal Gunasekara;Y. Takata;S. Kimura;M. Okuno;Y. Haruyama;N. Kosugi;K. G. Nath;H. Wada;A. Mitsuda;M. Shiga;T. Okuda;A. Harasawa;H. Ogasawara;A. Kotani
The resonant photoemission spectra and X-ray absorption spectra of temperature-induced valence transition material EuNi 2 (Si 1- x Ge x ) 2 around Eu 3 d –4 f , 4 d –4 f and Ni 2 p –3 d resonant excitation regions have been measured. From the comparison between the resonant photoemission spectra around the 3 d –4 f (bulk sensitive) and 4 d –4 f (surface sensitive) excitation regions, the Eu divalent component originating from the surface is separated from the bulk one. The divalent and the trivalent features of 4 f electrons are obviously distinguished depending on the excitation conditions. It was confirmed that the intensity ratio of the 4 f electronic structures between the Eu divalent and trivalent ions changes as a function of the temperature. The mean valence values estimated from the Eu M -edge X-ray absorption spectra and from the photoemission spectra were rather smaller than those obtained previously from the L -edge X-ray absorption spectra. The reason of the discrepancy is discussed. The spect...
影响因子:
64.8
作者:
A. Sekiyama;T. Iwasaki;K. Matsuda;Y. Saitoh;Y. Ōnuki;S. Suga
通讯作者:
A. Sekiyama;T. Iwasaki;K. Matsuda;Y. Saitoh;Y. Ōnuki;S. Suga