Spectroscopy Studies of Temperature-Induced Valence Transition on EuNi2(Si1-xGex)2 around Eu 3d–4f, 4d–4f and Ni 2p–3d Excitation Regions

Spectroscopy Studies of Temperature-Induced Valence Transition on EuNi2(Si1-xGex)2 around Eu 3d–4f, 4d–4f and Ni 2p–3d Excitation Regions
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Eu 3d–4f、4d–4f 和 Ni 2p–3d 激发区周围 EuNi2(Si1-xGex)2 温度诱导价态跃迁的光谱研究

DOI:
10.1143/jpsj.71.148
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发表时间:
2002
影响因子:
1.7
通讯作者:
A. Kotani
A. Kotani
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
T. Kinoshita;Heralu Pathirannehelage Nihal Jayal Gunasekara;Y. Takata;S. Kimura;M. Okuno;Y. Haruyama;N. Kosugi;K. G. Nath;H. Wada;A. Mitsuda;M. Shiga;T. Okuda;A. Harasawa;H. Ogasawara;A. Kotani

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测量了温度诱导价态跃迁材料EuNi 2(Si 1-xGex)2在Eu 3d-4f,4d-4f和Ni 2 p-3d共振激发区附近的共振光电子能谱和X射线吸收谱。从3d-4f(体敏)和4d-4f(表面敏)激发区附近的共振光电子能谱的比较中可以看出,来自表面的Eu二价组分与体敏的Eu二价组分是分离的。4f电子的二价和三价特征在不同激发条件下有明显的区别。据证实,Eu的二价和三价离子之间的4 f电子结构的强度比的变化作为温度的函数。从Eu的M边X射线吸收谱和光电子能谱估计的平均价值比以前从L边X射线吸收谱获得的那些要小得多。讨论了产生差异的原因。这是...
The resonant photoemission spectra and X-ray absorption spectra of temperature-induced valence transition material EuNi 2 (Si 1- x Ge x ) 2 around Eu 3 d –4 f , 4 d –4 f and Ni 2 p –3 d resonant excitation regions have been measured. From the comparison between the resonant photoemission spectra around the 3 d –4 f (bulk sensitive) and 4 d –4 f (surface sensitive) excitation regions, the Eu divalent component originating from the surface is separated from the bulk one. The divalent and the trivalent features of 4 f electrons are obviously distinguished depending on the excitation conditions. It was confirmed that the intensity ratio of the 4 f electronic structures between the Eu divalent and trivalent ions changes as a function of the temperature. The mean valence values estimated from the Eu M -edge X-ray absorption spectra and from the photoemission spectra were rather smaller than those obtained previously from the L -edge X-ray absorption spectra. The reason of the discrepancy is discussed. The spect...
DOI: 10.1038/35000140
发表时间: 2000-01
期刊: Nature
影响因子: 64.8
作者:
A. Sekiyama;T. Iwasaki;K. Matsuda;Y. Saitoh;Y. Ōnuki;S. Suga
通讯作者: A. Sekiyama;T. Iwasaki;K. Matsuda;Y. Saitoh;Y. Ōnuki;S. Suga