Analysis of the optical constants and bandgap energy in Al1-xInxN alloys grown on a c-plane freestanding GaN substrate by using spectroscopic ellipsometry

Analysis of the optical constants and bandgap energy in Al1-xInxN alloys grown on a c-plane freestanding GaN substrate by using spectroscopic ellipsometry
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使用光谱椭圆光度法分析 c 面独立式 GaN 衬底上生长的 Al1-xInxN 合金的光学常数和带隙能量

DOI:
10.35848/1347-4065/abc29f
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发表时间:
2020
影响因子:
1.5
通讯作者:
Tetsuya Takeuchi and Takao Miyajima
Tetsuya Takeuchi and Takao Miyajima
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Daichi Imai;Yuto Murakami;Rino Miyata;Hayata Toyoda;Tomoaki Yamaji;Makoto Miyoshi;Tetsuya Takeuchi and Takao Miyajima

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