Thickness dependent thermal conductivity of gallium nitride
Thickness dependent thermal conductivity of gallium nitride
复制标题
氮化镓的厚度相关热导率
DOI：
10.1063/1.4974321
复制
发表时间：
2017
影响因子：
4
通讯作者：
A. Schmidt
中科院分区：
文献类型：
--
作者：
Elbara Ziade;Jia Yang;G. Brummer;D. Nothern;T. Moustakas;A. Schmidt
为了达到更高的工作频率，氮化镓 (GaN) 晶体管的尺寸不断减小，散热成为器件性能和寿命的关键瓶颈。尽管表征控制薄 GaN 薄膜热传输的物理特性很重要，但文献还远非结论性的。在这封信中，我们报告了在没有过渡层的 4H-SiC 上生长的厚度范围为 15-1000 nm 的 GaN 薄膜的热导率测量结果。此外，我们测量了1μm厚的GaN薄膜在300< T< 600 K温度范围内的热导率，并使用声子输运模型来解释该薄膜的热导率。
As the size of gallium nitride (GaN) transistors is reduced in order to reach higher operating frequencies, heat dissipation becomes the critical bottleneck in device performance and longevity. Despite the importance of characterizing the physics governing the thermal transport in thin GaN films, the literature is far from conclusive. In this letter, we report measurements of thermal conductivity in a GaN film with thickness ranging from 15–1000 nm grown on 4H-SiC without a transition layer. Additionally, we measure the thermal conductivity in the GaN film when it is 1 μm-thick in the temperature range of 300 < T< 600 K and use a phonon transport model to explain the thermal conductivity in this film.