Filled and empty states of disordered GaN studied by x-ray absorption and emission
Filled and empty states of disordered GaN studied by x-ray absorption and emission
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通过 X 射线吸收和发射研究无序 GaN 的填充态和空态
DOI：
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发表时间：
2004
期刊：
影响因子：
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通讯作者：
S. Eisebitt
中科院分区：
文献类型：
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作者：
B. Ruck;A. Koo;U. Lanke;F. Budde;H. Trodahl;G. Williams;A. Bittar;J. Metson;E. Nodwell;T. Tiedje;A. Zimina;S. Eisebitt
X 射线吸收和发射光谱用于研究短程有序对无序 GaN 电子态的影响。微晶小至 3 nm 的纳米晶样品表现出类似于晶体 GaN 电子结构的加宽版本。在含有氧杂质或过量镓的非晶 GaN 薄膜中，电子结构甚至更加加宽。含氧薄膜在导带边缘上方显示出额外的态密度峰值，并且价带边缘向下移动。薄膜中捕获的分子氮的特征在吸收光谱和发射光谱中都很明显。
X-ray absorption and emission spectroscopies are used to study the effects of short-ranged ordering on the electronic states of disordered GaN. Nanocrystalline samples with crystallites as small as 3nm exhibit an electronic structure resembling a broadened version of that in crystalline GaN. The electronic structure is even more heavily broadened in amorphous GaN films containing oxygen impurities or excess gallium. The oxygen containing films show an additional peak in the density of states just above the conduction band edge, and a downward shift of the valence band edge. The signature of molecular nitrogen trapped within the films is evident in both the absorption and emission spectra.