DEPOSITION, CHARACTERIZATION, AND DEVICE DEVELOPMENT IN DIAMOND, SILICON-CARBIDE, AND GALLIUM NITRIDE THIN-FILMS
DEPOSITION, CHARACTERIZATION, AND DEVICE DEVELOPMENT IN DIAMOND, SILICON-CARBIDE, AND GALLIUM NITRIDE THIN-FILMS
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DOI：
10.1116/1.578313
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发表时间：
1993-07-01
期刊：
影响因子：
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通讯作者：
DAVIS, RF
中科院分区：
文献类型：
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作者：
DAVIS, RF
金刚石、碳化硅和氮化镓的极端热性能和电子性能提供了多种属性的组合，使任何用于高功率、高温、高频和光电应用的半导体材料具有最高的品质因数。综述了这三种材料薄膜的沉积方法以及化学、结构、微观结构和电学表征以及器件开发的结果。还指出了未来研究的问题和领域。
The extreme thermal and electronic properties of diamond, SiC, and GaN provide combinations of attributes which lead to the highest figures of merit for any semiconductor materials for high-power, high-temperature, high-frequency, and optoelectronic applications. The methods of deposition and the results of chemical, structural, microstructural and electrical characterization, and device development are reviewed for thin films of these three materials. Problems and areas of future research are also noted.