Effect of active layer thickness on bias stress effect in pentacene thin-film transistors
Effect of active layer thickness on bias stress effect in pentacene thin-film transistors
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DOI：
10.1063/1.2210791
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发表时间：
2006-06-05
影响因子：
4
通讯作者：
Subramanian, Vivek
中科院分区：
文献类型：
--
作者：
Chang, Josephine B.;Subramanian, Vivek
研究了不同有源层厚度下并五苯薄膜晶体管的偏置应力效应。我们发现，当并五苯半导体层厚度从10 nm增加到80 nm时，施加偏置的阈值电压的位移会加速，并且这种趋势与电流、初始阈值电压或导通电压无关。本研究揭示了导电通道上方的活性物质在薄膜器件中的作用，并描述了优化有机薄膜晶体管结构时需要考虑的重要效应。(c) 2006年美国物理研究所。
The bias stress effect in pentacene thin-film transistors is characterized for different active layer thicknesses. We show that the shift in threshold voltage under applied bias is accelerated as the pentacene semiconductor layer thickness is increased from 10 to 80 nm, and that this trend is not correlated with current, initial threshold voltage, or turn-on voltage. This study sheds light on the role of active material above the conductive channel in thin-film devices and describes effects that are important to consider when optimizing the structure of organic thin-film transistors. (c) 2006 American Institute of Physics.