Recombination dynamics of excitons bound to nitrogen isoelectronic centers in delta-doped GaP
Recombination dynamics of excitons bound to nitrogen isoelectronic centers in delta-doped GaP
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δ 掺杂 GaP 中与氮等电子中心结合的激子的复合动力学
DOI：
10.1103/physrevb.89.075308
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
and S. Francoeur
中科院分区：
文献类型：
--
作者：
P.St-Jean;G. Ethier-Majcher;Y. Sakuma;and S. Francoeur
利用时间分辨发光，我们报告的复合寿命的激子绑定到氮的等电子中心（IC）在掺杂的GaP。对于所考虑的所有IC（A线和，与），复合寿命对于构成精细结构的所有跃迁是相同的，表明所有八个激子状态之间的快速转移。从5到60 K，寿命降低了三个数量级，其特征在于三个不同的制度，依次占主导地位的（1）之间的热混合亮态和暗态的转移，（2）空穴逃逸或激子逃逸的和A线，（3）激子捕获通过跳跃从单氮中心到氮二联体。改进以前的人口平衡模型，包括轻和重空穴状态，我们准确地再现这种温度演化的寿命和量化的辐射寿命的所有过渡，暗态的能量位置，和激子捕获时间。
Using time-resolved luminescence, we report on the recombination lifetime of excitons bound to nitrogen isoelectronic centers (ICs) in-doped GaP. For all ICs considered (A line and, with), the recombination lifetime is identical for all transitions composing the fine structure, indicating a fast transfer between all eight excitonic states. From 5 to 60 K, the lifetime decreases by three orders of magnitude and is characterized by three distinct regimes successively dominated by (1) transfers between thermally mixed bright and dark states, (2) hole escape foror exciton escape forand the A line, and (3) exciton capture through hopping from single nitrogen centers to nitrogen dyads. Improving on previous population balance models to include both light- and heavy-hole states, we accurately reproduce this temperature evolution of the lifetime and quantify the radiative lifetime of all transitions, the energy position of dark states, and the exciton capture time.