Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of &ITn&IT-doped SnO2
Revisiting the origin of satellites in core-level photoemission of transparent conducting oxides: The case of &ITn&IT-doped SnO2
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DOI：
10.1103/physrevb.97.155102
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发表时间：
2018-04-03
影响因子：
3.7
通讯作者：
Egdell, Russell G.
中科院分区：
文献类型：
--
作者：
Borgatti, Francesco;Berger, J. A.;Egdell, Russell G.
本文以掺Sb的SnO_2为例，讨论了低传导电子密度金属体系的芯级光电子能谱中卫星结构的解释问题。从头算多体计算与实验的Sn4d态的硬X射线光电子能谱的比较表明，Sn4d态的强卫星是由掺杂引起的自由电子的等离子体振荡耦合形成的。在相同的理论框架下，价带谱的光谱变化也与动态屏蔽效应有关。这些结果表明，要解释这种窄带材料芯级光电子能谱中的电子关联特征，超越均匀电子气电子-等离子体耦合模型是必要的。
The longstanding problem of interpretation of satellite structures in core-level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO2 . Comparison of ab initio many-body calculations with experimental hard x-ray photoemission spectra of the Sn 4d states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core-level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential.