Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method
Structure and Dielectric Properties of Zn Doped PST Thin Films Prepared by Sol-Gel Method
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DOI：
10.4028/www.scientific.net/kem.336-338.283
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发表时间：
2007-04
期刊：
影响因子：
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通讯作者：
Z. Zheng;X. Li;G. Han;W. Weng;P. Du
中科院分区：
文献类型：
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作者：
Z. Zheng;X. Li;G. Han;W. Weng;P. Du
采用浸涂法通过溶胶-凝胶法在 ITO/玻璃基板上制备了 (PbySr1-y)ZnxTi1-xO3-x 薄膜。分别通过 XRD、SEM 和阻抗分析仪研究了薄膜的相结构、形貌和介电性能。 Zn 掺杂 PST 薄膜呈现出钙钛矿相结构。随着Zn掺杂量的增加，钙钛矿相薄膜的形成能力及其晶粒尺寸降低。薄膜的介电常数受氧空位的影响，氧空位可以通过Zn掺杂来控制。
(PbySr1-y)ZnxTi1-xO3-x thin films were prepared on ITO/glass substrate by sol–gel process using dip-coating method. The phase structure, morphology, and dielectric properties of thin films were investigated by XRD, SEM and impedance analyzer, respectively. The perovskite phase structure was exhibited in the Zn-doped PST thin films. The formation ability of the thin films of the perovskite phase and its grain size decreased with the increase in doping Zn. The dielectric constant of the thin film was influenced by oxygen vacancies which could be controlled by Zn doping.