Impurity induced insulator-to-metal transitions in half-filled Mott insulators
Impurity induced insulator-to-metal transitions in half-filled Mott insulators
复制标题
半填充莫特绝缘体中杂质引起的绝缘体到金属的转变
DOI：
10.1088/1742-6596/1293/1/012024
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
K. Kobayashi
中科院分区：
文献类型：
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作者：
H. Yokoyama1;R. Sato;K. Kobayashi
针对铜超导体，采用变分蒙特卡罗方法，研究了具有对角线传递（t’）的强相关方晶格Hubbard模型（U/t= 12）中点型杂质势(V)对半填充反铁磁和顺磁态的影响。在试验状态下，我们为V引入了rice - brinkman型一体投影仪，使我们能够以很小的统计误差处理整个V范围（−∞< V/t<∞）。发现填充控制型莫特（绝缘体到金属）转变发生在
In view of cuprate superconductors, effects of point-type impurity potential (V) on half-filled antiferromagnetic and paramagnetic states are studied for a strongly correlated square-lattice Hubbard model (U/t= 12) with a diagonal transfer (t'), using a variational Monte Carlo method. In the trial states, we introduce a Rice-Brinkman-type one-body projector for V, which enables us to treat the whole range of V (−∞< V/t<∞) with small statistical errors. Filling-control-type Mott (insulator-to-metal) transitions are found to occur at